View FS14KM-12A_424244.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MITSUBISHI Nch POWER MOSFET MITSUBISHI Nch POWER MOSFET
FS14KM-12A FS14KM-12A
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE
FS14KM-12A
OUTLINE DRAWING
10 0.3
Dimensions in mm
2.8 0.2
15 0.3
3.2 0.2
14 0.5
3.6 0.3
1.1 0.2 1.1 0.2 0.75 0.15
6.5 0.3
3 0.3
0.75 0.15
2.54 0.25
2.54 0.25

2.6 0.2
G 10V DRIVE G VDSS ............................................................................... 600V G rDS (ON) (MAX) .............................................................. 0.60 G ID ......................................................................................... 14A
GATE DRAIN SOURCE
TO-220FN
APPLICATION SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA PD Tch Tstg Viso --
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 200H VGS = 0V VDS = 0V
Conditions
Ratings 600 30 14 42 14 40 -55 ~ +150 -55 ~ +150
4.5 0.2
Unit V V A A A W C C V g Sep. 2001
AC for 1minute, Terminal to case Typical value
2000 2.0
MITSUBISHI Nch POWER MOSFET
FS14KM-12A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter
(Tch = 25C)
Test conditions ID = 1mA, VGS = 0V IGS = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 7A, VGS = 10V ID = 7A, VGS = 10V ID = 7A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 600 30 -- -- 2.5 -- -- 9.0 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3.0 0.46 3.22 15.0 2350 210 50 35 50 310 70 1.5 -- Max. -- -- 10 1 3.5 0.60 4.20 -- -- -- -- -- -- -- -- 2.0 3.13
Unit V V A mA V V S pF pF pF ns ns ns ns V C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 200V, ID = 7A, VGS = 10V, RGEN = RGS = 50
IS = 7A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA
7 5 3 2
tw = 10s 100s 1ms
10 ms
40
101
7 5 3 2
30
100
7 5 3 2
20
TC = 25C Single Pulse DC
10
10-1
7 5 3 2
0
0
50
100
150
200
23
5 7 101
23
5 7 102
23
57
CASE TEMPERATURE TC (C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL) 50
TC = 25C Pulse Test
OUTPUT CHARACTERISTICS (TYPICAL) 20
VGS = 20V,10V,8V,6V
DRAIN CURRENT ID (A)
40
VGS = 20V,10V,8V
DRAIN CURRENT ID (A)
16
5V
30
6V
12
TC = 25C Pulse Test
20
5V
8
10
PD = 40W
4
PD = 40W
0
0
10
20
30
40
50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001
MITSUBISHI Nch POWER MOSFET
FS14KM-12A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40
TC = 25C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 1.0
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()
32
0.8
VGS = 10V 20V
24
ID = 25A 20A
0.6
16
0.4
TC = 25C Pulse Test
8
14A 7A
0.2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 40 102
7 5 3 2
FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE yfs (S)
32
101
7 5 3 2 TC = 25C,75C,125C
24
16
100
7 5 3 2 VDS = 10V Pulse Test 2 3 5 7 101 2 3 5 7 102
8
0
TC = 25C VDS = 10V Pulse Test
0
4
8
12
16
20
10-1 0 10
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL)
104 7 5
SWITCHING CHARACTERISTICS (TYPICAL) 103
7 5 TCh = 25C VGS = 10V VDD = 200V RGEN = RGS = 50
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
3 2 103 7 5 3 2 102 7 5 3 2 101 TCh = 25C VGS = 0V f = 1MHZ
Ciss
td(off) 3 2
Coss
102 7 5
3 2
tf tr td(on)
Crss
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
101
100
2
3
5 7 101
2
3
5 7 102
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FS14KM-12A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40
VGS = 0V Pulse Test TC = 25C 75C
GATE-SOURCE VOLTAGE VGS (V)
20
16
SOURCE CURRENT IS (A)
VDS = 100V 200V
32
12
400V
24
125C
8
16
4
TCh = 25C ID = 14A
8
0
0
40
80
120
160
200
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101
VGS = 10V 7 ID = 7A 5 Pulse Test 3 2
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0
VDS = 10V ID = 1mA
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
0 50 100 150
4.0
3.0
100
7 5 3 2
2.0
1.0
10-1
-50
0
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)
TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101
7 5 3 2 D = 1.0 = 0.5
1.2
100
3 2
1.0
= 0.2 7 5 = 0.1 = 0.05 = 0.02
tw
0.8
PDM = 0.01
10-1
7 5
T D= tw T
0.6
3 2 Single Pulse
0.4
-50
0
50
100
150
10-2 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s)
CHANNEL TEMPERATURE Tch (C)
Sep. 2001

▲Up To Search▲

Price & Availability of FS14KM-12A

	To Download FS14KM-12A Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .